收藏本站
Si7956DP
Vishay Siliconix
Dual N-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
150
R DS(on) ( Ω )
0.105 at V GS = 10 V
0.115 at V GS = 6 V
I D (A)
4.1
3.9
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? Low On-Resistance in New Low Thermal
Resistance PowerPAK ? Package
? Dual MOSFET for Space Savings
? 100 % R g Tested
APPLICATIONS
PowerPAK SO-8
? High Efficiency Primary Side Switches
? Half Bridge and Forward Converters
6.15 mm
1
S1
G1
5.15 mm
D 1
D 2
2
3
S2
G2
4
D1
8
7
D1
D2
G 1
G 2
6
5
D2
Bottom View
Ordering Information: Si7956DP-T1-E3 (Lead (Pb)-free)
Si7956DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S 1
N-Channel MOSFET
S 2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
150
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Single Avalanche Current
Single Avalanche Energy
T A = 25 °C
T A = 70 °C
L = 0.1 mH
I D
I DM
I S
I AS
E AS
4.1
3.3
2.9
20
15
11
2.6
2.1
1.2
A
mJ
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b,c
T A = 25 °C
T A = 70 °C
P D
T J , T stg
3.5
2.2
- 55 to 150
260
1.4
0.9
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
26
60
2.2
35
85
2.7
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72960
S09-0223-Rev. B, 09-Feb-09
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI7958DP-T1-GE3 MOSFET DL N-CH 40V PPAK 8-SOIC
SI7964DP-T1-GE3 MOSFET DUAL N-CH 60V PPAK 8SOIC
SI7994DP-T1-GE3 MOSFET N-CH DL 30V PWRPAK 8-SOIC
SI7997DP-T1-GE3 MOSFET P-CH 30V 8-SOIC
SI7998DP-T1-GE3 MOSFET 2N-CH 30V 25A PPAK 8SOIC
SI8405DB-T1-E3 MOSFET P-CH 12V 3.6A 2X2 4-MFP
SI8417DB-T2-E1 MOSFET P-CH 12V 14.5A 2X2 6MFP
SI8439DB-T1-E1 MOSFET P-CH 8V D-S MICROFOOT
相关代理商/技术参数
SI7958DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 40-V (D-S) MOSFET
SI7958DP-T1 制造商:Vishay Siliconix 功能描述:DUAL N-CHANNEL 40-V (D-S) MOSFET - Tape and Reel
SI7958DP-T1-E3 功能描述:MOSFET DUAL N-CH 40V (D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7958DP-T1-GE3 功能描述:MOSFET Dual N-Ch 40V 16.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7960DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 60-V (D-S) MOSFET
SI7960DP-T1-E3 功能描述:MOSFET DUAL N-CH 60V (D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7960DP-T1-GE3 功能描述:MOSFET Dual N-Ch 60V 21mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI7962DP 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual N-Channel 40-V (D-S) MOSFET